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APTM120DA56T1G
Boost chopper MOSFET Power Module
5 6 11
VDSS = 1200V RDSon = 560m typ @ Tj = 25C ID = 18A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction
CR1 3 4
NTC
Features * Power MOS 8TM MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Very low stray inductance Internal thermistor for temperature monitoring High level of integration
Q2 9 10 1 2
12
* * * Benefits * * * * * *
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25C Tc = 80C Max ratings 1200 18 13 104 30 672 390 14 Unit V A V m W A
December, 2007 1-5 APTM120DA56T1G - Rev 0
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM120DA56T1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions Tj = 25C VDS =1200V VGS = 0V Tj = 125C VGS = 10V, ID = 14A VGS = VDS, ID = 2.5mA VGS = 30 V Min Typ Max 100 500 672 5 100 Unit A m V nA
3
560 4
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 14A Resistive switching @ 25C VGS = 15V VBus = 800V ID = 14A RG = 2.2 Min Typ 7736 715 92 300 50 140 50 31 170 48 ns nC Max Unit pF
Chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V
di/dt =200A/s
Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 80C
Min 1200
Typ
Max 100 500
Unit V A A
Reverse Recovery Time Reverse Recovery Charge
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
30 2.6 3.2 1.8 300 380 360 1700
3.1 V
ns nC
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode
Min
Typ
Max 0.32 1.2 150 125 100 4.7 80
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
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2-5
APTM120DA56T1G - Rev 0
2500 -40 -40 -40 2.5
December, 2007
Thermal and package characteristics
APTM120DA56T1G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Resistance @ 25C R25 B 25/85 T25 = 298.15 K
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 3952
Max
Unit k K
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
Typical Mosfet Performance Curve
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15
0.3 0.9 0.7 0.5
0.1 0.05
0.1 0.05 Single P ulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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3-5
APTM120DA56T1G - Rev 0
December, 2007
APTM120DA56T1G
Low Voltage Output Characteristics 40
VGS=10V
30 ID, Drain Current (A) 25
Low Voltage Output Characteristics
TJ=125C
ID, Drain Current (A)
30
TJ=25C
VGS=6, 7, 8 & 9V
20 15 10 5 0
4.5V 5V
20
TJ=125C
10
0 0 5 10 15 20
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V) Normalized RDS(on) vs. Temperature RDSon, Drain to Source ON resistance
VDS, Drain to Source Voltage (V) Transfert Characteristics 20 ID, Drain Current (A) 16 12 8
TJ=25C VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle TJ=125C
3 2.5 2 1.5 1 0.5 0 25 50 75 100 125 150
VGS=10V ID=14A
4 0 0 1 2 3 4 5 6
TJ, Junction Temperature (C) Gate Charge vs Gate to Source VGS, Gate to Source Voltage 12
VDS=600V
VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 10000 C, Capacitance (pF)
Ciss
10 8 6 4 2 0 0
ID=14A TJ=25C
VDS=240V
1000
Coss
VDS=960V
100
Crss
10 40 80 120 160 200 240 280 320 Gate Charge (nC) 0 50 100 150 200
December, 2007 4-5 APTM120DA56T1G - Rev 0
VDS, Drain to Source Voltage (V)
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APTM120DA56T1G
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.3 0.4 0.2 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5
0 0.00001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 80 IF, Forward Current (A)
TJ=125C
Trr vs. Current Rate of Charge
500 400 300
45 A TJ=125C VR=800V
60
40
200 100 0 0 200 400 600
30 A 15 A
20
TJ=25C
0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) QRR, Reverse Recovery Charge (C) QRR vs. Current Rate Charge
TJ=125C VR=800V
800 1000 1200
-diF/dt (A/s) IRRM vs. Current Rate of Charge IRRM, Reverse Recovery Current (A)
4
30 25 20 15 10 5 0 0 200 400 600 800 1000 1200
-diF/dt (A/s)
45 A TJ=125C VR=800V 30 A 15 A
45 A
3
30 A
2
15 A
1
0
0
200
400
600
800
1000 1200
-diF/dt (A/s)
Capacitance vs. Reverse Voltage 200 160 120 80 40 0 1 10 100 VR, Reverse Voltage (V) 1000
Max. Average Forward Current vs. Case Temp. 50 40 IF(AV) (A) 30 20 10 0 25 50 75 100 125 150 175 Case Temperature (C)
Duty Cycle = 0.5 TJ=175C
C, Capacitance (pF)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTM120DA56T1G - Rev 0
December, 2007

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